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| (R) P0130AA 0.8A SCRs SENSITIVE MAIN FEATURES: A Symbol IT(RMS) VDRM/VRRM IGT Value 0.8 100 1 Unit A V A G K DESCRIPTION The P0130AA is a gate sensitive SCR, packaged in TO-92, used in conjunction of a TN22 A.S.DTM and of a resistor in electronic starter for fluorescent tubelamps. TO-92 ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle) Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25C tp = 10 ms I t dI/dt IGM PG(AV) Tstg Tj It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 10ms F = 60 Hz tp = 20 s Tj = 25C Tj = 125C Tj = 125C Tj = 125C 7 0.24 50 1 0.1 - 40 to + 150 - 40 to + 125 A2S A/s A W C Tl = 55C Tl = 55C Value 0.8 0.5 8 A Unit A A May 2002 - Ed: 2 1/5 P0130AA ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol IGT VD = 12 V VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM RL = 3.3 k RGK = 1 k IRG = 10 A IT = 50 mA IG = 1 mA ITM = 1.6 A RGK = 1 k RGK = 1 k RGK = 1 k Tj = 125C Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C tp = 380 s Tj = 125C RL = 140 Test Conditions MIN. MAX. MAX. MIN. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. MAX. P0130AA 0.1 1 0.8 0.1 8 5 6 25 1.95 0.95 600 1 100 A V V V mA mA V/s V V m A Unit VD = 67 % VDRM Threshold voltage Dynamic resistance VDRM = VRRM RGK = 1 k THERMAL RESISTANCES Symbol Rth(j-i) Rth(j-a) Junction to case (DC) Junction to ambient (DC) Parameter Value 80 150 Unit C/W C/W PRODUCT SELECTOR Part Number P0130AA Voltage 100V Sensitivity 1 A Package TO-92 2/5 P0130AA ORDERING INFORMATION P 01 30 SENSITIVE SCR SERIES CURRENT: 0.8A AA VOLTAGE: A: 100V Blank 1EA3 PACKING MODE: 1EA3: TO-92 bulk 2AL3: TO-92 ammopack PACKAGE: A: TO-92 SENSITIVITY: 30: 1A OTHER INFORMATION Part Number P0130AA 1EA3 P0130AA 2AL3 Marking P0130AA P0130AA Weight 0.2 g 0.2 g Base Quantity 2500 2000 Packing mode Bulk Ammopack Note: xx = sensitivity, y = voltage Fig. 1: Maximum average power dissipation versus average on-state current. P(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 Fig. 2-1: Average and D.C. on-state current versus lead temperature. IT(av)(A) 0.1 0.2 0.3 0.4 0.5 0.6 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Tlead or Ttab (C) 0 25 50 75 100 125 Fig. 2-2: Average and D.C. on-state current versus ambient temperature. 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. K = [Zth(j-a)/Rth(j-a)] 1.00 IT(av)(A) 0.10 Tamb(C) 0 25 50 75 100 125 0.01 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 3/5 P0130AA Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25C Fig. 5:Relative variation of holding current versus gate-cathode resistance (typical values). IH[Rgk]/IH[Rgk=1k] 6 5 4 3 2 1 Tj(C) 0 -40 Rgk(k) -20 0 20 40 60 80 100 120 140 Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). dV/dt[Rgk] / dV/dt[Rgk=1k] Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). dV/dt[Cgk] / dV/dt[Rgk=1k] 10.0 10 8 6 1.0 4 2 Rgk(k) Cgk(nF) 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 1 2 3 4 5 6 7 Fig. 8: Surge peak on-state current versus number of cycles. Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of It. ITSM(A), I2t(A2s) ITSM(A) 8 7 tp=10ms 100.0 6 5 4 3 2 1 0 1 10 Repetitive Tamb=25C Non repetitive Tj initial=25C Onecycle 10.0 1.0 Numberofcycles 100 1000 0.1 0.01 0.10 tp(ms) 1.00 10.00 4/5 P0130AA Fig. 10: On-state characteristics (maximum values). ITM(A) 1E+1 1E+0 1E-1 VTM(V) 1E-2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 PACKAGE MECHANICAL DATA TO-92 (Plastic) DIMENSIONS A a B C REF. Millimeters Min. Typ. 1.35 4.70 2.54 4.40 12.70 3.70 0.50 0.173 0.500 Max. Min. Inches Typ. 0.053 0.185 0.100 Max. F D E A B C D E F a 0.146 0.019 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States http://www.st.com 5/5 |
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